Paper Titles

Effects of Copper Diffusion on the Native Defect EL2 in GaAs
p.1003

EL2 Induced Enhancement of the Donor Acceptor Pair Luminescence in GaAs
p.1009

Observation of Persistent Electron Capture in N-Type Gallium Arsenide Studied by Optically Detected Magnetic Resonance
p.1015

ODMR Investigation of Proton Irradiated GaAs
p.1021

Uniaxial-Stress Symmetry Studies on the E1, E2 and E3 Irradiation-Induced Defects in Gallium Arsenide
p.1027

Magnetic Resonance and Positron Annihilation of Intrinsic Acceptors in ITC-Treated GaAs
p.1033

Defects in Neutron Irradiated, LEC Semi-Insulating GaAs
p.1039

Electrical Characterization of Defects Introduced During Plasma-Based Processing of GaAs
p.1045

Metastable Charge Recovery in Plasma-Irradiated η-GaAs
p.1051

HomeMaterials Science ForumMaterials Science Forum Vols. 258-263Uniaxial-Stress Symmetry Studies on the E1, E2 and...

Uniaxial-Stress Symmetry Studies on the E1, E2 and E3 Irradiation-Induced Defects in Gallium Arsenide

Article Preview

Abstract:

You might also be interested in these eBooks

Defects in Semiconductors 19

Info:

Periodical:

Materials Science Forum (Volumes 258-263)

Pages:

1027-1032

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.258-263.1027

Citation:

Cite this paper

Online since:

December 1997

Authors:

S.J. Hartnett, D.W. Palmer

Keywords:

Defect Symmetries, DLTS, E1, E2, E3, GaAs, Irradiation, Uniaxial Stress

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 1997 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: