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HomeMaterials Science ForumMaterials Science Forum Vols. 258-263Electrical Characterization of Defects Introduced...

Electrical Characterization of Defects Introduced During Plasma-Based Processing of GaAs

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Defects in Semiconductors 19

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Periodical:

Materials Science Forum (Volumes 258-263)

Pages:

1045-1050

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.258-263.1045

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Online since:

December 1997

Authors:

F. Danie Auret, S.A. Goodman, G. Myburg, W.E. Meyer, Prakash N.K. Deenapanray, M. Murtagh, Shu-Ren Ye, H.J. Masterson, J.T. Beechinor, G.M. Crean

Keywords:

Defect, DLTS, He-Plasma Processing, SiCl₄ Reactive Ion Etching

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© 1997 Trans Tech Publications Ltd. All Rights Reserved

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