Paper Titles

Uniaxial-Stress Symmetry Studies on the E1, E2 and E3 Irradiation-Induced Defects in Gallium Arsenide
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Magnetic Resonance and Positron Annihilation of Intrinsic Acceptors in ITC-Treated GaAs
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Defects in Neutron Irradiated, LEC Semi-Insulating GaAs
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Electrical Characterization of Defects Introduced During Plasma-Based Processing of GaAs
p.1045

Metastable Charge Recovery in Plasma-Irradiated η-GaAs
p.1051

Metastable Amorphous Structure in Ion Implanted GaAs
p.1057

Theory of Nitrogen-Hydrogen Complexes in GaP
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Photoluminescence, Optical Absorption, and EPR Studies of the Co²⁺-S_P Pair Defect in GaP
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Resonance-Mode Phonon Replica in the Optical Spectra of Transition-Metal Impurities in GaP
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HomeMaterials Science ForumMaterials Science Forum Vols. 258-263Metastable Charge Recovery in Plasma-Irradiated...

Metastable Charge Recovery in Plasma-Irradiated η-GaAs

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Defects in Semiconductors 19

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Periodical:

Materials Science Forum (Volumes 258-263)

Pages:

1051-1056

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.258-263.1051

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Online since:

December 1997

Authors:

Keiji Wada, Hachiro Nakanishi

Keywords:

Bias-Annealing, GaAs, Injection-Annealing, Metastability, Plasma-Induced Defects

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© 1997 Trans Tech Publications Ltd. All Rights Reserved

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