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Uniaxial-Stress Symmetry Studies on the E1, E2 and E3 Irradiation-Induced Defects in Gallium Arsenide
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Magnetic Resonance and Positron Annihilation of Intrinsic Acceptors in ITC-Treated GaAs
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Defects in Neutron Irradiated, LEC Semi-Insulating GaAs
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Electrical Characterization of Defects Introduced During Plasma-Based Processing of GaAs
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HomeMaterials Science ForumMaterials Science Forum Vols. 258-263Magnetic Resonance and Positron Annihilation of...

Magnetic Resonance and Positron Annihilation of Intrinsic Acceptors in ITC-Treated GaAs

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Defects in Semiconductors 19

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Periodical:

Materials Science Forum (Volumes 258-263)

Pages:

1033-1038

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.258-263.1033

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Online since:

December 1997

Authors:

K. Krambrock, C. Corbel, Johann Martin Spaeth

Keywords:

Acceptor, EPR, GaAs, Intrinsic Defect, ITC, ODMR, Positron Annihilation

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© 1997 Trans Tech Publications Ltd. All Rights Reserved

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