Characterization of Implantation Layer in (1-100) Oriented 4H- and 6H- SiC

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Periodical:

Materials Science Forum (Volumes 338-342)

Edited by:

Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer

Pages:

905-908

DOI:

10.4028/www.scientific.net/MSF.338-342.905

Citation:

M. Satoh et al., "Characterization of Implantation Layer in (1-100) Oriented 4H- and 6H- SiC", Materials Science Forum, Vols. 338-342, pp. 905-908, 2000

Online since:

May 2000

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$35.00

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