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HomeMaterials Science ForumMaterials Science Forum Vols. 338-342Characterization of Implantation Layer in (1-100)...

Characterization of Implantation Layer in (1-100) Oriented 4H- and 6H- SiC

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Silicon Carbide and Related Materials - 1999

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Periodical:

Materials Science Forum (Volumes 338-342)

Pages:

905-908

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342.905

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Online since:

May 2000

Authors:

Masataka Satoh, Y. Nakaike, K. Uchimura, K. Kuriyama

Keywords:

(1-100)-oriented, Ion Implantation

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© 2000 Trans Tech Publications Ltd. All Rights Reserved

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