Improved Annealing Process for 6H-SiC p+-n Junction Creation by Al Implantation

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Periodical:

Materials Science Forum (Volumes 338-342)

Edited by:

Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer

Pages:

921-924

DOI:

10.4028/www.scientific.net/MSF.338-342.921

Citation:

M. Lazar et al., "Improved Annealing Process for 6H-SiC p+-n Junction Creation by Al Implantation", Materials Science Forum, Vols. 338-342, pp. 921-924, 2000

Online since:

May 2000

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$35.00

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