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Secondary Defect Distribution in High Energy Ion Implanted 4H-SiC
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Coimplantation Effects of (C and Si)/Ga in 6H-SiC
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Improved Annealing Process for 6H-SiC p⁺-n Junction Creation by Al Implantation
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Characteristics of n-p Junction Diodes made by Double-Implantations into SiC
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Reactivation of Hydrogen-Passivated Aluminum Acceptors in p-type SiC
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HomeMaterials Science ForumMaterials Science Forum Vols. 338-342Improved Annealing Process for 6H-SiC p+-n...

Improved Annealing Process for 6H-SiC p⁺-n Junction Creation by Al Implantation

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Silicon Carbide and Related Materials - 1999

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Periodical:

Materials Science Forum (Volumes 338-342)

Pages:

921-924

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342.921

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Online since:

May 2000

Authors:

Mihai Lazar, Laurent Ottaviani, Marie Laure Locatelli, Dominique Planson, B. Canut, Jean-Pierre Chante

Keywords:

Annealing, Electrical Activation, Ion Implantation, RBS/Channeling, SIMS, Surface Stoichiometry

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© 2000 Trans Tech Publications Ltd. All Rights Reserved

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