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Improved Annealing Process for 6H-SiC p⁺-n Junction Creation by Al Implantation
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Characteristics of n-p Junction Diodes made by Double-Implantations into SiC
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Reactivation of Hydrogen-Passivated Aluminum Acceptors in p-type SiC
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Formation of Passivated Layers in P-Type SiC by Low Energy Ion Implantation of Hydrogen
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Metal-contact Enhanced Incorporation of Deuterium in 4H- and 6H-SiC
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Transient-Enhanced Diffusion of Boron in SiC
p.941

Selective Doping of 6H-SiC by Diffusion of Boron
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Ab Initio Study of Intrinsic Point defects and Dopant-defect Complexes in SiC: Application to Boron Diffusion
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Beryllium Implantation Doping of Silicon Carbide
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HomeMaterials Science ForumMaterials Science Forum Vols. 338-342Metal-contact Enhanced Incorporation of Deuterium...

Metal-contact Enhanced Incorporation of Deuterium in 4H- and 6H-SiC

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Silicon Carbide and Related Materials - 1999

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Periodical:

Materials Science Forum (Volumes 338-342)

Pages:

937-940

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342.937

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Online since:

May 2000

Authors:

Margareta K. Linnarsson, Anita Lloyd Spetz, Martin S. Janson, Lars-G. Ekedahl, S. Karlsson, Adolf Schöner, Ingemar Lundström, Bengt Gunnar Svensson

Keywords:

Deuterium, Diffusion, Secondary Ion Mass Spectroscopy (SIMS)

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© 2000 Trans Tech Publications Ltd. All Rights Reserved

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