Paper Titles

Formation of Passivated Layers in P-Type SiC by Low Energy Ion Implantation of Hydrogen
p.933

Metal-contact Enhanced Incorporation of Deuterium in 4H- and 6H-SiC
p.937

Transient-Enhanced Diffusion of Boron in SiC
p.941

Selective Doping of 6H-SiC by Diffusion of Boron
p.945

Ab Initio Study of Intrinsic Point defects and Dopant-defect Complexes in SiC: Application to Boron Diffusion
p.949

Beryllium Implantation Doping of Silicon Carbide
p.953

Ion-Channeling Studies of Interfaces and Defect Properties in Silicon Carbide
p.957

Formation of Precipitates in 6H-SiC after Oxygen Implantation and Subsequent Annealing
p.961

Microstructural Evolution of Radiation-Induced Defects in Semi-Insulating SiC During Isochronal Annealing
p.965

HomeMaterials Science ForumMaterials Science Forum Vols. 338-342Ab Initio Study of Intrinsic Point defects and...

Ab Initio Study of Intrinsic Point defects and Dopant-defect Complexes in SiC: Application to Boron Diffusion

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Silicon Carbide and Related Materials - 1999

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Periodical:

Materials Science Forum (Volumes 338-342)

Pages:

949-952

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342.949

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Online since:

May 2000

Authors:

M. Bockstedte, Oleg Pankratov

Keywords:

Ab Initio Defect-Energetics, Boron, Defect Complexes, Diffusion, Point Defect

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© 2000 Trans Tech Publications Ltd. All Rights Reserved

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