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HomeMaterials Science ForumMaterials Science Forum Vols. 338-342Formation of Precipitates in 6H-SiC after Oxygen...

Formation of Precipitates in 6H-SiC after Oxygen Implantation and Subsequent Annealing

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Silicon Carbide and Related Materials - 1999

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Periodical:

Materials Science Forum (Volumes 338-342)

Pages:

961-964

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342.961

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Online since:

May 2000

Authors:

Béla Pécz, O. Klettke, Gerhard Pensl, J. Stoemenos

Keywords:

Extended Defects, Oxygen Implantation, Oxygen Precipitates

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© 2000 Trans Tech Publications Ltd. All Rights Reserved

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