Ion-Channeling Studies of Interfaces and Defect Properties in Silicon Carbide

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Periodical:

Materials Science Forum (Volumes 338-342)

Edited by:

Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer

Pages:

957-960

DOI:

10.4028/www.scientific.net/MSF.338-342.957

Citation:

W. Jiang and W. J. Weber, "Ion-Channeling Studies of Interfaces and Defect Properties in Silicon Carbide", Materials Science Forum, Vols. 338-342, pp. 957-960, 2000

Online since:

May 2000

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$35.00

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