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HomeMaterials Science ForumMaterials Science Forum Vols. 338-342Transient-Enhanced Diffusion of Boron in SiC

Transient-Enhanced Diffusion of Boron in SiC

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Silicon Carbide and Related Materials - 1999

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Periodical:

Materials Science Forum (Volumes 338-342)

Pages:

941-944

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342.941

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Online since:

May 2000

Authors:

Michael Laube, Gerhard Pensl

Keywords:

Carbon/Boron-Coimplantation, Kick-Out Mechanism, Outdiffusion, SIMS

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© 2000 Trans Tech Publications Ltd. All Rights Reserved

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