Paper Titles

Metal-contact Enhanced Incorporation of Deuterium in 4H- and 6H-SiC
p.937

Transient-Enhanced Diffusion of Boron in SiC
p.941

Selective Doping of 6H-SiC by Diffusion of Boron
p.945

Ab Initio Study of Intrinsic Point defects and Dopant-defect Complexes in SiC: Application to Boron Diffusion
p.949

Beryllium Implantation Doping of Silicon Carbide
p.953

Ion-Channeling Studies of Interfaces and Defect Properties in Silicon Carbide
p.957

Formation of Precipitates in 6H-SiC after Oxygen Implantation and Subsequent Annealing
p.961

Microstructural Evolution of Radiation-Induced Defects in Semi-Insulating SiC During Isochronal Annealing
p.965

Vacancy-Type Defects in Proton-Irradiated 6H- and 4H-SiC: A Systematic Study with Positron Annihilation Techniques
p.969

HomeMaterials Science ForumMaterials Science Forum Vols. 338-342Beryllium Implantation Doping of Silicon Carbide

Beryllium Implantation Doping of Silicon Carbide

Article Preview

Abstract:

You might also be interested in these eBooks

Silicon Carbide and Related Materials - 1999

Info:

Periodical:

Materials Science Forum (Volumes 338-342)

Pages:

953-956

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342.953

Citation:

Cite this paper

Online since:

May 2000

Authors:

T. Henkel, Yasuhito Tanaka, Naoto Kobayashi, Shin Ichi Nishizawa, Shunichi Hishita

Keywords:

6H-SiC, Annealing, Beryllium, Damage, Doping, Ion Implantation, SIMS

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2000 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: