Paper Titles

Electrical and Structural Properties of Al and B Implanted 4H-SiC
p.909

Secondary Defect Distribution in High Energy Ion Implanted 4H-SiC
p.913

Coimplantation Effects of (C and Si)/Ga in 6H-SiC
p.917

Improved Annealing Process for 6H-SiC p⁺-n Junction Creation by Al Implantation
p.921

Characteristics of n-p Junction Diodes made by Double-Implantations into SiC
p.925

Reactivation of Hydrogen-Passivated Aluminum Acceptors in p-type SiC
p.929

Formation of Passivated Layers in P-Type SiC by Low Energy Ion Implantation of Hydrogen
p.933

Metal-contact Enhanced Incorporation of Deuterium in 4H- and 6H-SiC
p.937

Transient-Enhanced Diffusion of Boron in SiC
p.941

HomeMaterials Science ForumMaterials Science Forum Vols. 338-342Characteristics of n-p Junction Diodes made by...

Characteristics of n-p Junction Diodes made by Double-Implantations into SiC

Article Preview

Abstract:

You might also be interested in these eBooks

Silicon Carbide and Related Materials - 1999

Info:

Periodical:

Materials Science Forum (Volumes 338-342)

Pages:

925-928

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342.925

Citation:

Cite this paper

Online since:

May 2000

Authors:

Jesse B. Tucker, E.M. Handy, Mulpuri V. Rao, O.W. Holland, Kenneth A. Jones, N. Papanicolaou

Keywords:

Annealing, Diode, Doping, Ion Implantation

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2000 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: