Ion Beam Induced Nanocrystallization of SiC
p.897
p.897
High Temperature Implant Activation in 4H and 6H-SiC in a Silane Ambient to Reduce Step Bunching
p.901
p.901
Characterization of Implantation Layer in (1-100) Oriented 4H- and 6H- SiC
p.905
p.905
Electrical and Structural Properties of Al and B Implanted 4H-SiC
p.909
p.909
Secondary Defect Distribution in High Energy Ion Implanted 4H-SiC
p.913
p.913
Coimplantation Effects of (C and Si)/Ga in 6H-SiC
p.917
p.917
Improved Annealing Process for 6H-SiC p+-n Junction Creation by Al Implantation
p.921
p.921
Characteristics of n-p Junction Diodes made by Double-Implantations into SiC
p.925
p.925
Reactivation of Hydrogen-Passivated Aluminum Acceptors in p-type SiC
p.929
p.929
Secondary Defect Distribution in High Energy Ion Implanted 4H-SiC
Abstract:
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Periodical:
Materials Science Forum (Volumes 338-342)
Pages:
913-916
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Online since:
May 2000
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© 2000 Trans Tech Publications Ltd. All Rights Reserved
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