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Damage Reduction in Channeled Ion Implanted 6H-SiC
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Ion Beam Induced Nanocrystallization of SiC
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High Temperature Implant Activation in 4H and 6H-SiC in a Silane Ambient to Reduce Step Bunching
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Characterization of Implantation Layer in (1-100) Oriented 4H- and 6H- SiC
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Electrical and Structural Properties of Al and B Implanted 4H-SiC
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HomeMaterials Science ForumMaterials Science Forum Vols. 338-342High Temperature Implant Activation in 4H and...

High Temperature Implant Activation in 4H and 6H-SiC in a Silane Ambient to Reduce Step Bunching

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Silicon Carbide and Related Materials - 1999

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Periodical:

Materials Science Forum (Volumes 338-342)

Pages:

901-904

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342.901

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Online since:

May 2000

Authors:

Stephen E. Saddow, John R. Williams, Tamara Isaacs-Smith, Michael A. Capano, James A. Cooper, Michael S. Mazzola, A.J. Hsieh, Jeff B. Casady

Keywords:

Anneal, Ion Implantation, Silane Overpressure

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© 2000 Trans Tech Publications Ltd. All Rights Reserved

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