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HomeMaterials Science ForumMaterials Science Forum Vols. 338-342Electrical and Structural Properties of Al and B...

Electrical and Structural Properties of Al and B Implanted 4H-SiC

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Silicon Carbide and Related Materials - 1999

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Periodical:

Materials Science Forum (Volumes 338-342)

Pages:

909-912

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342.909

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Online since:

May 2000

Authors:

Yasunori Tanaka, Naoto Kobayashi, Hajime Okumura, Ryoichi Suzuki, Toshiyuki Ohdaira, Mitsuru Hasegawa, M. Ogura, Sadafumi Yoshida, Hisao Tanoue

Keywords:

Aluminum (Al), Boron, D_I Center, Divacancy, Hall-Effect Measurement, Ion Implantation, Photoluminescence (PL), Positron Annihilation Spectroscopy, Vacancy

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© 2000 Trans Tech Publications Ltd. All Rights Reserved

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