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Vacancy-Type Defects in Proton-Irradiated 6H- and 4H-SiC: A Systematic Study with Positron Annihilation Techniques
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Radiation-induced Conductivity and Simultaneous Photoconductivity Suppression in 6H-SiC under 17 MeV Proton Irradiation
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Study of Contact Formation by High Temperature Deposition of Ni on SiC
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HomeMaterials Science ForumMaterials Science Forum Vols. 338-342Deep Centres Appearing in 6H and 4H SiC after...

Deep Centres Appearing in 6H and 4H SiC after Proton Irradiation

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Silicon Carbide and Related Materials - 1999

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Periodical:

Materials Science Forum (Volumes 338-342)

Pages:

973-976

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342.973

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Online since:

May 2000

Authors:

Alexander A. Lebedev, D.V. Davydov, Anatoly M. Strel'chuk, Alexey N. Kuznetsov, Elena V. Bogdanova, Vitalii V. Kozlovski, N.S. Savkina

Keywords:

Compensation, Deep Centers, DLTS, Irradiation, Proton

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© 2000 Trans Tech Publications Ltd. All Rights Reserved

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