Paper Titles

Formation of Precipitates in 6H-SiC after Oxygen Implantation and Subsequent Annealing
p.961

Microstructural Evolution of Radiation-Induced Defects in Semi-Insulating SiC During Isochronal Annealing
p.965

Vacancy-Type Defects in Proton-Irradiated 6H- and 4H-SiC: A Systematic Study with Positron Annihilation Techniques
p.969

Deep Centres Appearing in 6H and 4H SiC after Proton Irradiation
p.973

Radiation-induced Conductivity and Simultaneous Photoconductivity Suppression in 6H-SiC under 17 MeV Proton Irradiation
p.977

Study of Contact Formation by High Temperature Deposition of Ni on SiC
p.981

Ohmic Contact Formation on n-Type 6H-SiC using NiSi₂
p.985

Lowering the Annealing Temperature of Ni/SiC for Ohmic Contacts under N₂ Gas, and Application to a UV Sensor
p.989

Adhesion and Microstructure of Ni Contacts to 3C-SiC
p.993

HomeMaterials Science ForumMaterials Science Forum Vols. 338-342Radiation-induced Conductivity and Simultaneous...

Radiation-induced Conductivity and Simultaneous Photoconductivity Suppression in 6H-SiC under 17 MeV Proton Irradiation

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Silicon Carbide and Related Materials - 1999

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Periodical:

Materials Science Forum (Volumes 338-342)

Pages:

977-980

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342.977

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Online since:

May 2000

Authors:

H. Amekura, N. Kishimoto, K. Kono

Keywords:

Carrier removal, Ion Irradiation, Photoconductivity, Radiation Effects, Radiation-Induced Conductivity

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© 2000 Trans Tech Publications Ltd. All Rights Reserved

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