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Microstructural Evolution of Radiation-Induced Defects in Semi-Insulating SiC During Isochronal Annealing
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Deep Centres Appearing in 6H and 4H SiC after Proton Irradiation
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Radiation-induced Conductivity and Simultaneous Photoconductivity Suppression in 6H-SiC under 17 MeV Proton Irradiation
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Study of Contact Formation by High Temperature Deposition of Ni on SiC
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Ohmic Contact Formation on n-Type 6H-SiC using NiSi₂
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Lowering the Annealing Temperature of Ni/SiC for Ohmic Contacts under N₂ Gas, and Application to a UV Sensor
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Low Resistance Ohmic Contacts to n-SiC Using Niobium
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HomeMaterials Science ForumMaterials Science Forum Vols. 338-342Study of Contact Formation by High Temperature...

Study of Contact Formation by High Temperature Deposition of Ni on SiC

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Silicon Carbide and Related Materials - 1999

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Periodical:

Materials Science Forum (Volumes 338-342)

Pages:

981-984

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342.981

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Online since:

May 2000

Authors:

K. Robbie, S.T. Jemander, N. Lin, Christer Hallin, R. Erlandsson, G.V. Hansson, Lynnette D. Madsen

Keywords:

Auger Electron Spectroscopy (AES), Auger Lineshape, Contact, Contact Formation, Graphite Intercalation, High Temperature Annealing, Hydrogen Etching, Nickel Silicide, Ohmic Contact

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© 2000 Trans Tech Publications Ltd. All Rights Reserved

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