Paper Titles

Vacancy-Type Defects in Proton-Irradiated 6H- and 4H-SiC: A Systematic Study with Positron Annihilation Techniques
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Deep Centres Appearing in 6H and 4H SiC after Proton Irradiation
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Radiation-induced Conductivity and Simultaneous Photoconductivity Suppression in 6H-SiC under 17 MeV Proton Irradiation
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Study of Contact Formation by High Temperature Deposition of Ni on SiC
p.981

Ohmic Contact Formation on n-Type 6H-SiC using NiSi₂
p.985

Lowering the Annealing Temperature of Ni/SiC for Ohmic Contacts under N₂ Gas, and Application to a UV Sensor
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Adhesion and Microstructure of Ni Contacts to 3C-SiC
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Low Resistance Ohmic Contacts to n-SiC Using Niobium
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A Comparison of Single- and Multi-Layer Ohmic Contacts Based on Tantalum Carbide on n-Type and Osmium on p-Type Silicon Carbide at Elevated Temperatures
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HomeMaterials Science ForumMaterials Science Forum Vols. 338-342Ohmic Contact Formation on n-Type 6H-SiC using...

Ohmic Contact Formation on n-Type 6H-SiC using NiSi₂

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Silicon Carbide and Related Materials - 1999

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Periodical:

Materials Science Forum (Volumes 338-342)

Pages:

985-988

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342.985

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Online since:

May 2000

Authors:

Tomonori Nakamura, Hisanori Shimada, Masataka Satoh

Keywords:

NiSi₂, Ohmic Contact

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© 2000 Trans Tech Publications Ltd. All Rights Reserved

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