Ohmic Contact Formation on n-Type 6H-SiC using NiSi2
p.985
p.985
Lowering the Annealing Temperature of Ni/SiC for Ohmic Contacts under N2 Gas, and Application to a UV Sensor
p.989
p.989
Adhesion and Microstructure of Ni Contacts to 3C-SiC
p.993
p.993
Low Resistance Ohmic Contacts to n-SiC Using Niobium
p.997
p.997
A Comparison of Single- and Multi-Layer Ohmic Contacts Based on Tantalum Carbide on n-Type and Osmium on p-Type Silicon Carbide at Elevated Temperatures
p.1001
p.1001
Improved Ohmic Contacts to 6H-SiC by Pulsed Laser Processing
p.1005
p.1005
Al/Si Ohmic Contacts to p-Type 4H-SiC for Power Devices
p.1009
p.1009
Searching for Device Processing Compatible Ohmic Contacts to Implanted p-Type 4H-SiC
p.1013
p.1013
Structural and Morphological Characterization of Al/Ti-Based Ohmic Contacts on p-Type 4H-SiC Annealed Under Various Conditions
p.1017
p.1017
A Comparison of Single- and Multi-Layer Ohmic Contacts Based on Tantalum Carbide on n-Type and Osmium on p-Type Silicon Carbide at Elevated Temperatures
Abstract:
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Periodical:
Materials Science Forum (Volumes 338-342)
Pages:
1001-1004
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Online since:
May 2000
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© 2000 Trans Tech Publications Ltd. All Rights Reserved
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