A Comparison of Single- and Multi-Layer Ohmic Contacts Based on Tantalum Carbide on n-Type and Osmium on p-Type Silicon Carbide at Elevated Temperatures

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Periodical:

Materials Science Forum (Volumes 338-342)

Edited by:

Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer

Pages:

1001-1004

DOI:

10.4028/www.scientific.net/MSF.338-342.1001

Citation:

T. Jang et al., "A Comparison of Single- and Multi-Layer Ohmic Contacts Based on Tantalum Carbide on n-Type and Osmium on p-Type Silicon Carbide at Elevated Temperatures", Materials Science Forum, Vols. 338-342, pp. 1001-1004, 2000

Online since:

May 2000

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