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Structural and Morphological Characterization of Al/Ti-Based Ohmic Contacts on p-Type 4H-SiC Annealed Under Various Conditions
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HomeMaterials Science ForumMaterials Science Forum Vols. 338-342Searching for Device Processing Compatible Ohmic...

Searching for Device Processing Compatible Ohmic Contacts to Implanted p-Type 4H-SiC

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Silicon Carbide and Related Materials - 1999

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Periodical:

Materials Science Forum (Volumes 338-342)

Pages:

1013-1016

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342.1013

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Online since:

May 2000

Authors:

Yan Bin Luo, Feng Yan, Kiyoshi Tone, Jian Hui Zhao, John Crofton

Keywords:

Aluminum (Al), Ohmic Contact, Palladium, Titanium (Ti)

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© 2000 Trans Tech Publications Ltd. All Rights Reserved

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