Paper Titles

Al/Si Ohmic Contacts to p-Type 4H-SiC for Power Devices
p.1009

Searching for Device Processing Compatible Ohmic Contacts to Implanted p-Type 4H-SiC
p.1013

Structural and Morphological Characterization of Al/Ti-Based Ohmic Contacts on p-Type 4H-SiC Annealed Under Various Conditions
p.1017

Thermal Stability in Vacuum and in Air of Al/Ni/W Based Ohmic Contacts to p-Type SiC
p.1021

A UHV Study of Ni/SiC Schottky Barrier and Ohmic Contact Formation
p.1025

Fermi Level Pinning and Schottky Barrier Characteristics on Reactively Ion Etched 4H-SiC
p.1029

Real-Time Assessment of Overlayer Removal on 4H-SiC Surfaces: Techniques and Relevance to Contact Formation
p.1033

Pre-Growth Treatment of 4H-SiC Substrates by Hydrogen Etching at Low Pressure
p.1037

SiC In-Situ Pre-Growth Etching: A Thermodynamic Study
p.1041

HomeMaterials Science ForumMaterials Science Forum Vols. 338-342A UHV Study of Ni/SiC Schottky Barrier and Ohmic...

A UHV Study of Ni/SiC Schottky Barrier and Ohmic Contact Formation

Article Preview

Abstract:

You might also be interested in these eBooks

Silicon Carbide and Related Materials - 1999

Info:

Periodical:

Materials Science Forum (Volumes 338-342)

Pages:

1025-1028

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342.1025

Citation:

Cite this paper

Online since:

May 2000

Authors:

A. Kestle, S.P. Wilks, P.R. Dunstan, M. Pritchard, G. Pope, A. Koh, Philip Andrew Mawby

Keywords:

I-V, Nickel Ni, Ohmic Contact, Schottky Barrier, X-Ray Photoelectron Spectroscopy (XPS)

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2000 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: