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HomeMaterials Science ForumMaterials Science Forum Vols. 338-342Al/Si Ohmic Contacts to p-Type 4H-SiC for Power...

Al/Si Ohmic Contacts to p-Type 4H-SiC for Power Devices

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Silicon Carbide and Related Materials - 1999

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Periodical:

Materials Science Forum (Volumes 338-342)

Pages:

1009-1012

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342.1009

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Online since:

May 2000

Authors:

Liliana Kassamakova, Roumen Kakanakov, Ivan Kassamakov, Nils Nordell, Susan Savage, Erik B. Svedberg, Lynnette D. Madsen

Keywords:

Annealing, Contact Resistivity, Temperature Stability

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© 2000 Trans Tech Publications Ltd. All Rights Reserved

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