Improved Ohmic Contacts to 6H-SiC by Pulsed Laser Processing
p.1005
p.1005
Al/Si Ohmic Contacts to p-Type 4H-SiC for Power Devices
p.1009
p.1009
Searching for Device Processing Compatible Ohmic Contacts to Implanted p-Type 4H-SiC
p.1013
p.1013
Structural and Morphological Characterization of Al/Ti-Based Ohmic Contacts on p-Type 4H-SiC Annealed Under Various Conditions
p.1017
p.1017
Thermal Stability in Vacuum and in Air of Al/Ni/W Based Ohmic Contacts to p-Type SiC
p.1021
p.1021
A UHV Study of Ni/SiC Schottky Barrier and Ohmic Contact Formation
p.1025
p.1025
Fermi Level Pinning and Schottky Barrier Characteristics on Reactively Ion Etched 4H-SiC
p.1029
p.1029
Real-Time Assessment of Overlayer Removal on 4H-SiC Surfaces: Techniques and Relevance to Contact Formation
p.1033
p.1033
Pre-Growth Treatment of 4H-SiC Substrates by Hydrogen Etching at Low Pressure
p.1037
p.1037
Thermal Stability in Vacuum and in Air of Al/Ni/W Based Ohmic Contacts to p-Type SiC
Abstract:
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Periodical:
Materials Science Forum (Volumes 338-342)
Pages:
1021-1024
Citation:
Online since:
May 2000
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Сopyright:
© 2000 Trans Tech Publications Ltd. All Rights Reserved
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