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HomeMaterials Science ForumMaterials Science Forum Vols. 338-342Improved Ohmic Contacts to 6H-SiC by Pulsed Laser...

Improved Ohmic Contacts to 6H-SiC by Pulsed Laser Processing

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Silicon Carbide and Related Materials - 1999

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Periodical:

Materials Science Forum (Volumes 338-342)

Pages:

1005-1008

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342.1005

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Online since:

May 2000

Authors:

Koichi Nakashima, Osamu Eryu, S. Ukai, K. Yoshida, Masanori Watanabe

Keywords:

Aluminum (Al), Excimer Laser, Laser Processing, Ohmic Contact, Silicon Carbide (SiC), Titanium (Ti), Tungsten

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© 2000 Trans Tech Publications Ltd. All Rights Reserved

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