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Materials Science Forum Vols. 338-342

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342

ToC:

Table of Contents

Paper Title Page

Characterization of AlGaN/GaN HEMT Devices Grown by MBE
Authors: T.W. MacElwee, J.A. Bardwell, H. Tang, J.B. Webb
1647
A Comparative Study of n-p GaN/SiC Heterojunction and p-n 6h-SiC Homojunction Diodes
Authors: J. Vacas, H. Lahrèche, Teresa Monteiro, C. Gaspar, Eduarda Pereira, Christian Brylinski, M.A. di Forte-Poisson
1651
Electric Characteristics of 6H-SiC/GaN Isotype n-n Heterojunctions
Authors: N.I. Kuznetsov, A.E. Nikolaev, Yu.V. Melnik, Irina P. Nikitina
1655

Showing 401 to 403 of 403 Paper Titles

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