Abstract: “removed due to double publication”. The original paper: Journal: Semiconductor Science and Technology Create an alertIssue Volume 15, Number 6 Citation: L S Tan et al 2000 Semicond. Sci. Technol. 15 585 doi: 10.1088/0268-1242/15/6/317 can be accesses at IOP: http://iopscience.iop.org/0268-1242/15/6/317

1619

Time-Resolved Photoluminescence Measurements of InGaN Light-Emitting Diodes

Authors: Milan Pophristic, F.H. Long, C.A. Tran, Ian T. Ferguson

1623

GaN PIN Photodiodes Grown on Sapphire and SiC Substrates

Authors: G.M. Smith, M.F. Chriss, F.D. Tamweber, K.S. Boutros, J.S. Flynn, D.M. Keogh

1627

Temperature Dependent Performance of GaN Schottky Diode Rectifiers

Authors: X.A. Cao, G.T. Dang, A.P. Zhang, F. Ren, Stephen J. Pearton, C.M. Lee, C.-C. Chuo, J.-I. Chyi, G.C. Chi, J. Han, S.N.G. Chu, R.G. Wilson

1631

Monte Carlo Simulation of Gunn Effect and Microwave Power Generation at 240 GHz in n⁺-n^--n-n⁺ GaN Structures

Authors: Jian Hui Zhao, Viktor Gružinskis, M. Weiner, M. Pan, P. Shiktorov, E. Starikov

1635

DC and Large-Signal RF Performance of Recessed Gate GaN MESFETs Fabricated by the Photoelectrochemical Etching Process

Authors: Won Sang Lee, Ki Woong Chung, Moo Whan Shin

1639

Improved 10-GHz Operation of GaN/AlGaN HEMTs on Silicon Carbide

Authors: S.T. Sheppard, K. Doverspike, M. Leonard, W.L. Pribble, S.T. Allen, John W. Palmour

1643