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HomeMaterials Science ForumMaterials Science Forum Vols. 338-342

Materials Science Forum Vols. 338-342

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342

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Table of Contents

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Paper Title Page

Theory of Impurities and Defects in III-Nitrides: Vacancies in GaN and Related Materials

Authors: Chris G. Van de Walle

1561

Nonabrupt Interface Related Exciton Energy Shifts in GaN/Al_xGa_1-xN Quantum Dots

Authors: J. Ribeiro Filho, V. Lemos, J.S. de Sousa, G.A. Farias, V.N. Freire

1567

Radiative Recombination in InGaN/GaN Multiple Quantum Wells

Authors: Peder Bergman, Bo Monemar, G.R. Pozina, B.E. Sernelius, P.O. Holtz, Hiroshi Amano, Isamu Akasaki

1571

Impact of Epitaxial Lateral Overgrowth on the Recombination Dynamics in GaN Determined by Time Resolved Micro-Photoluminescence Spectroscopy

Authors: J. Holst, A. Kaschner, Andreas Hoffmann, I. Broser, P. Fischer, F. Bertram, T. Riemann, J. Christen, K. Hiramatsu, T. Shibata, N. Sawaki

1575

Structured Ultrafast Carrier Drift Velocity in Photoexcited Zincblende GaN

Authors: C.G. Rodrigues, A.R. Vasconcelos, R. Luzzi, V. Lemos, V.N. Freire

1579

Characterization of Thick GaN Layers Using Guided Optical Waves

Authors: D. Ciplys, R. Rimeika, M. Asif Khan, J.W. Yang, Remis Gaska, Michael S. Shur

1583

Polarization Memory in Band Edge Luminescence from Free Standing Gallium Nitride

Authors: M.E. Kompan, S.D. Raevki, I.N. Safronov, I.Yu. Shabanov, Yu.V. Zhilyaev

1587

Enhancement of UV-Sensitivity in GaN / GaAs Heterostructures by Si-Doping

Authors: M. Lisker, Hartmut Witte, A. Krtschil, J. Christen, Donat J. As, B. Schöttker, K. Lischka

1591

Resonant Raman Scattering and the Emission Process in Zincblende-In_xGa_1-xN

Authors: V. Lemos, E. Silveira, J.R. Leite, A. Tabata, R. Trentin, T. Frey, Donat J. As, D. Schikora, K. Lischka

1595

A Comparison of Aluminum Nitride Freely Nucleated and Seeded on 6H-Silicon Carbide

Authors: J.H. Edgar, L.H. Robins, S.E. Coatney, L. Liu, J. Chaudhuri, K. Ignatiev, Z. Rek

1599

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