Materials Science Forum Vols. 338-342

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https://doi.org/10.4028/www.scientific.net/MSF.338-342

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Paper Title Page

High Temperature 4H-SiC FET for Gas Sensing Applications

Authors: Susan Savage, Andrey O. Konstantinov, A.M. Saroukhan, Chris I. Harris

1431

High Temperature Gas Sensors Based on Catalytic Metal Field Effect Transistors

Authors: Henrik Svenningstorp, Lars Unéus, Peter Tobias, Ingemar Lundström, Lars-G. Ekedahl, Anita Lloyd Spetz

1435

SiC-Based Gas Sensor Development

Authors: Gary W. Hunter, Philip G. Neudeck, M. Gray, D. Androjna, Liang Yu Chen, Richard W. Hoffman Jr., C.C. Liu, Q.H. Wu

1439

Fabrication of SiC Hydrogen Sensor by Pd-Implantation

Authors: C.I. Muntele, D. Ila, E.K. Williams, D.B. Poker, D.K. Hensley, David J. Larkin, Iulia Muntele

1443

Epitaxial 6H-SiC Layers as Detectors of Nuclear Particles

Authors: Alexander A. Lebedev, N.S. Savkina, M. Kajita, Nikita B. Strokan, D.V. Davydov

1447

GaN Quantum Dots on Sapphire and Si Substrates

Authors: Hadis Morkoç, M.A. Reshchikov, A.A. Baski, M.I. Nathan

1453

Achievement of MBE-Grown GaN Heteroepitaxial Layer with (0001) Ga-Polarity and Improved Quality by In Exposure

Authors: Toshihide Ide, Mitsuaki Shimizu, Xu-Qiang Shen, Shinji Hara, Hajime Okumura, Toshio Nemoto

1459

Crack-Free, Single-Crystal GaN Grown on 100 mm Diameter Silicon

Authors: H.M. Liaw, R. Venugopal, J. Wan, R. Doyle, P. Fejes, Mark J. Loboda, M.R. Melloch

1463

3C-SiC Pseudosubstrates for the Growth of Cubic GaN

Authors: P. Dupel, Thierry Chassagne, Didier Chaussende, Yves Monteil, François Cauwet, Etienne Bustarret, A. Deneuville, G. Bentoumi, Eugénie Martinez, B. Daudin, G. Feuillet

1467

Lateral- and Pendeo-Epitaxial Growth and Defect Reduction in GaN Thin Films

Authors: Robert F. Davis, O.H. Nam, T.S. Zheleva, Thomas Gehrke, Kevin J. Linthicum, Pradeep Rajagopal

1471