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HomeMaterials Science ForumMaterials Science Forum Vols. 338-342

Materials Science Forum Vols. 338-342

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342

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Table of Contents

Paper Title Page

Highly Durable SiC nMISFET's at 450°C

Authors: W.J. Zhu, Xie Wen Wang, T.P. Ma, Jesse B. Tucker, Mulpuri V. Rao

1311

SiC MISFETs with MBE-grown AlN Gate Dielectric

Authors: Carl Mikael Zetterling, Mikael Östling, Hiroshi Yano, Tsunenobu Kimoto, Hiroyuki Matsunami, Kevin J. Linthicum, Robert F. Davis

1315

Steady-State and Transient Forward Current-Voltage Characteristics of 5.5 kV 4H-Silicon Carbide Diodes at High and Superhigh Current Densities

Authors: N.V. Dyakonova, Pavel A. Ivanov, V.A. Kozlov, Michael E. Levinshtein, John W. Palmour, Sergey L. Rumyantsev, Ranbir Singh

1319

Current Voltage Characteristics of High-Voltage 4H Silicon Carbide Diodes

Authors: Uwe Zimmermann, Anders Hallén, Bo Breitholtz

1323

Dynamic Avalanche and Trapped Charge in 4H-SiC Diodes

Authors: Martin Domeij, Bo Breitholtz, P. Liberski, A. Martinez, Peder Bergman

1327

Comparison of Nitrogen and Phosphorus Implanted, Planar, High-Voltage 4H-SiC Junction Rectifiers

Authors: K. Chatty, V. Khemka, T. Paul Chow, Ronald J. Gutmann

1331

Dynamic and Steady-State Description of Incomplete Ionization in 4H-SiC Power Diodes under Turn-Off

Authors: A. Martinez, Ulf Lindefelt

1335

Simulation and Fabrication of High-Voltage 4H-SiC Diodes with Multiple Floating Guard Ring Termination

Authors: David C. Sheridan, G. Niu, J. Neil Merrett, J.D. Cressler, C. Ellis, Chin Che Tin, R.R. Siergiej

1339

Transient Characterization of SiC P-N Diode

Authors: N. Keskar, K. Shenai, Philip G. Neudeck

1343

Formation of Deep pn Junctions by MeV Al- and B-ion Implantations into 4H-SiC and Reverse Characteristics

Authors: Nao Miyamoto, A. Saitoh, Tsunenobu Kimoto, Hiroyuki Matsunami, Y. Hishida, Masanori Watanabe

1347