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HomeMaterials Science ForumMaterials Science Forum Vols. 338-342

Materials Science Forum Vols. 338-342

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342

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Table of Contents

Paper Title Page

Large Contact Ti/4H-SiC Schottky Diodes Fabricated Using Standard Silicon Processing Techniques

Authors: C. Sudre, M.B. Mooney, C. Leveugle, J. O'Brien, W.A. Lane

1191

Optical Beam Induced Current Analysis of High-Voltage 4H-SiC Schottky Rectifiers

Authors: Takashi Tsuji, R. Asai, Katsunori Ueno, Shinji Ogino

1195

Effect of Plasma Etching and Sacrificial Oxidation on 4H-SiC Schottky Barrier Diodes

Authors: D.J. Morrison, A.J. Pidduck, V. Moore, P.J. Wilding, Keith P. Hilton, Michael J. Uren, C. Mark Johnson

1199

4H-SiC Device Scaling Development on Repaired Micropipe Substrates

Authors: T.E. Schattner, Jeff B. Casady, M.C.D. Smith, Michael S. Mazzola, Vladimir Dmitriev, S.V. Rentakova, Stephen E. Saddow

1203

Design and Characterization of a SiC Schottky Diode Mixer

Authors: Joakim Eriksson, Fariba Ferdos, Herbert Zirath, Niklas Rorsman

1207

Breakdown Voltage Improvement of 4H-SiC Schottky Diodes by a Thin Surface Implant

Authors: V. Khemka, K. Chatty, T. Paul Chow, Ronald J. Gutmann

1211

DC and Pulse Characterizations of (600V) 6H-SiC Schottky Diode Breakdown

Authors: Alphonse Torres, O. Flament, O. Musseau, Thierry Billon

1215

6H-SiC Schottky Barrier Diodes with Nearly Ideal Breakdown Voltage

Authors: Gheorghe Brezeanu, M. Badila, José Millan, Philippe Godignon, Marie Laure Locatelli, Jean-Pierre Chante, Alexander A. Lebedev, V. Banu

1219

Lateral Current Spreading in SiC Schottky Diodes using Field-Plate Edge Termination

Authors: Q. Zhang, V. Madangarli, M. Tarplee, Tangali S. Sudarshan

1223

Characterization of Schottky Contact on p-type 6H-SiC

Authors: Kiichi Kamimura, Shinsuke Okada, Hitoshi Ito, Masato Nakao, Yoshiharu Onuma

1227