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HomeMaterials Science ForumMaterials Science Forum Vols. 338-342

Materials Science Forum Vols. 338-342

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342

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Paper Title Page

Electrically Active Traps at the 4H-SiC/SiO₂ Interface Responsible for the Limitation of the Channel Mobility

Authors: M. Bassler, Valeri V. Afanas'ev, Gerhard Pensl, M. Schulz

1065

Anomalously High Density of Interface States Near the Conduction Band in SiO₂/4H-SiC MOS Devices

Authors: Mrinal K. Das, Benjamin S. Um, James A. Cooper

1069

Effect of Post-oxidation-annealing in Hydrogen on SiO₂/4H-SiC Interface

Authors: Seiji Suzuki, Kenji Fukuda, Hideyo Okushi, Kiyoko Nagai, Toshihiro Sekigawa, Sadafumi Yoshida, Tomoyuki Tanaka, Kazuo Arai

1073

Process Dependence of Inversion Layer Mobility in 4H-SiC Devices

Authors: Dev Alok, Emil Arnold, Richard Egloff

1077

Controlled Thermal Oxidation of Sacrificial Silicon on 4H-SiC Epilayer

Authors: A. Koh, A. Kestle, P.R. Dunstan, M. Pritchard, S.P. Wilks, G. Pope, Philip Andrew Mawby

1081

Ozone Treament of SiC for Improved Performance of Gas Sensitive Schottky Diodes

Authors: S. Zangooie, H. Arwin, Ingemar Lundström, Anita Lloyd Spetz

1085

Reliability and Degradation of Metal-Oxide-Semiconductor Capacitors on 4H- and 6H-Silicon Carbide

Authors: Michael Treu, Reinhold Schörner, Peter Friedrichs, Roland Rupp, A. Wiedenhofer, Dietrich Stephani, Heiner Ryssel

1089

SiC Devices with ONO Stacked Dielectrics

Authors: Lori A. Lipkin, John W. Palmour

1093

The Effect of Si:C Source Ratio on SiO₂/SiC Interface State Density for Nitrogen Doped 4H and 6H-SiC

Authors: G.Y. Chung, Chin Che Tin, J.H. Won, John R. Williams

1097

Channel Doped SiC-MOSFETs

Authors: Shinji Ogino, Tadaaki Oikawa, Katsunori Ueno

1101