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HomeMaterials Science ForumMaterials Science Forum Vols. 338-342

Materials Science Forum Vols. 338-342

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342

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Table of Contents

Paper Title Page

Selective Doping of 6H-SiC by Diffusion of Boron

Authors: Stanislav I. Soloviev, Ying Gao, I.I. Khlebnikov, Tangali S. Sudarshan

945

Ab Initio Study of Intrinsic Point defects and Dopant-defect Complexes in SiC: Application to Boron Diffusion

Authors: M. Bockstedte, Oleg Pankratov

949

Beryllium Implantation Doping of Silicon Carbide

Authors: T. Henkel, Yasuhito Tanaka, Naoto Kobayashi, Shin Ichi Nishizawa, Shunichi Hishita

953

Ion-Channeling Studies of Interfaces and Defect Properties in Silicon Carbide

Authors: Weilin Jiang, William J. Weber

957

Formation of Precipitates in 6H-SiC after Oxygen Implantation and Subsequent Annealing

Authors: Béla Pécz, O. Klettke, Gerhard Pensl, J. Stoemenos

961

Microstructural Evolution of Radiation-Induced Defects in Semi-Insulating SiC During Isochronal Annealing

Authors: Werner Puff, Adam G. Balogh, Peter Mascher

965

Vacancy-Type Defects in Proton-Irradiated 6H- and 4H-SiC: A Systematic Study with Positron Annihilation Techniques

Authors: Werner Puff, Adam G. Balogh, Peter Mascher

969

Deep Centres Appearing in 6H and 4H SiC after Proton Irradiation

Authors: Alexander A. Lebedev, D.V. Davydov, Anatoly M. Strel'chuk, Alexey N. Kuznetsov, Elena V. Bogdanova, Vitalii V. Kozlovski, N.S. Savkina

973

Radiation-induced Conductivity and Simultaneous Photoconductivity Suppression in 6H-SiC under 17 MeV Proton Irradiation

Authors: H. Amekura, N. Kishimoto, K. Kono

977

Study of Contact Formation by High Temperature Deposition of Ni on SiC

Authors: K. Robbie, S.T. Jemander, N. Lin, Christer Hallin, R. Erlandsson, G.V. Hansson, Lynnette D. Madsen

981