Materials Science Forum Vols. 338-342

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https://doi.org/10.4028/www.scientific.net/MSF.338-342

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Paper Title Page

The Carbon Vacancy Pair in 4H and 6H SiC

Authors: Nguyen Tien Son, P.N. Hai, A. Shuja, W.M. Chen, J. Lennart Lindström, Bo Monemar, Erik Janzén

821

Electron Spin Resonance in Neutron-Irradiated n-type 6H-Silicon Carbide

Authors: S. Kanazawa, I. Kimura, M. Okada, T. Nozaki, I. Kanno, S. Ishihara, Masanori Watanabe

825

Physics of SiC Processing

Authors: Gerhard Pensl, Valeri V. Afanas'ev, M. Bassler, Thomas Frank, Michael Laube, Michael Weidner

831

Polishing and Surface Characterization of SiC Substrates

Authors: W.J. Everson, David Snyder, V.D. Heydemann

837

Comparison of Mechanical and Chemomechanical Polished SiC Wafers Using Photon Backscattering

Authors: W.C. Mitchel, J. Brown, D. Buckanan, R. Bertke, K. Malalingham, F. Orazio, P. Pirouz, Huang-Ju R. Tseng, Uma B. Ramabadran, Bahram Roughani

841

Damage-Free Surface Modification of Hexagonal Silicon Carbide Wafers

Authors: T.C. Chandler, Jr., M.B. Lari, Tangali S. Sudarshan

845

Nuclear Transmutation Doping of Phosphorus into 6H-SiC

Authors: S. Tamura, Tsunenobu Kimoto, Hiroyuki Matsunami, M. Okada, S. Kanazawa, I. Kimura

849

Radiation Defects and Doping of SiC with Phosphorous by Nuclear Transmutation Doping (NTD)

Authors: Hans Heissenstein, Horst Sadowski, Christian Peppermüller, Reinhard Helbig

853

Relationship between Donor Activation and Defect Annealing in 6H-SiC Hot-Implanted with Phosphorus Ions

Authors: Takeshi Ohshima, Akira Uedono, Hisayoshi Itoh, Masahito Yoshikawa, Kazutoshi Kojima, Sohei Okada, Isamu Nashiyama, L. Bouwhuis, Shoichiro Tanigawa, Thomas Frank, Gerhard Pensl

857

Hot-Implantation of Phosphorus Ions into 4H-SiC

Authors: Seiji Imai, Setsuko Kobayashi, Takashi Shinohe, Kenji Fukuda, Yasunori Tanaka, Junji Senzaki, Hisao Tanoue, Naoto Kobayashi, Hideyo Okushi

861