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HomeMaterials Science ForumMaterials Science Forum Vols. 338-342

Materials Science Forum Vols. 338-342

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342

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Table of Contents

Paper Title Page

Photon Emission Mechanisms in 6H and 4H-SiC MOSFETs

Authors: C. Banc, Edwige Bano, Thierry Ouisse, Sigo Scharnholz, U. Schmid, W. Wondrak, E. Niemann

695

Non-Contact Photovoltage Measurements in SiC

Authors: Yaroslav Koshka, Michael S. Mazzola

699

Ionization Energies and Electron Mobilities in Phosphorus- and Nitrogen-Implanted 4H-Silicon Carbide

Authors: Michael A. Capano, James A. Cooper, M.R. Melloch, Adam W. Saxler, W.C. Mitchel

703

MicroRaman and Hall Effect Study of n-Type Bulk 4H-SiC

Authors: M. Chafai, J. Jiménez, Enric Martín, W.C. Mitchel, Adam W. Saxler, Ronald Perrin

707

Electrical Properties of 3C-SiC Grown on Si by CVD Method using Si₂(CH₃)₆

Authors: Yasuichi Masuda, Yi Chen, Hideharu Matsuura, Hiroshi Harima, Shigehiro Nishino

711

Electrical and Physical Behavior of SiC Layers on Insulator (SiCOI)

Authors: E. Hugonnard-Bruyère, Fabrice Letertre, Lea Di Cioccio, Hans Jürgen von Bardeleben, J.L. Cantin, Thierry Ouisse, Thierry Billon, Gérard Guillot

715

Theoretical Treatments of Band Edges in SiC Polytypes at High Carrier Concentrations

Authors: Ulf Lindefelt, C. Persson

719

A Theoretical Study of Electron Drift Mobility Anisotropy in n-Type 4H–and 6H–SiC

Authors: Enn Velmre, Andres Udal

725

Theoretical Calculation of the Electron Hall Mobility in n-Type 4H– and 6H-SiC

Authors: Hisaomi Iwata, Kohei M. Itoh

729

Hall Scattering Factor and Electron Mobility of 4H SiC: Measurements and Numerical Simulation

Authors: G. Rutsch, Robert P. Devaty, Wolfgang J. Choyke, D.W. Langer, L.B. Rowland, E. Niemann, Frank Wischmeyer

733