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HomeMaterials Science ForumMaterials Science Forum Vols. 338-342

Materials Science Forum Vols. 338-342

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342

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Table of Contents

Paper Title Page

Electron Beam Induced Current Investigation of High-Voltage 4H Silicon Carbide Diodes

Authors: John Österman, Anders Hallén, Mikael Jargelius, Uwe Zimmermann, Augustinas Galeckas, Bo Breitholtz

777

Measurement of Charge Carrier Lifetime Temperature-Dependence in 4H-SiC Power Diodes

Authors: Andres Udal, Enn Velmre

781

Donors and Acceptors in SiC-Studies with EPR and ENDOR

Authors: Johann Martin Spaeth

785

ESR Spectrum of Nitrogen in 6H SiC in the Ground and Excited States

Authors: Ekaterina N. Kalabukhova, S.N. Lukin

791

Dopant-related Complexes in SiC

Authors: Adam Gali, J. Miró, Peter Deák, Robert P. Devaty, Wolfgang J. Choyke

795

The Spatial Distribution of the Electronic Wave Function of the Shallow Boron Acceptor in 4H- and 6H-SiC

Authors: A. van Duijn-Arnold, J. Mol, R. Verberk, J. Schmidt, E.N. Mokhov, P.G. Baranov

799

The Electronic Structure of the Be Acceptor Centers in 6H-SiC

Authors: A. van Duijn-Arnold, J. Schmidt, O.G. Poluektov, P.G. Baranov, E.N. Mokhov

805

Electron Paramagnetic Resonance of the Scandium Acceptor in 4H and 6H Silicon Carbide

Authors: Siegmund Greulich-Weber, M. März, Johann Martin Spaeth, E.N. Mokhov, Ekaterina N. Kalabukhova

809

ESR Study of Delamination in H⁺ Implanted Silicon Carbide

Authors: Ershad Ali Chowdhury, Toshihide Seki, Tomio Izumi, Hisao Tanaka, Tohru Hara

813

Vacancies and their Complexes with H in SiC

Authors: Peter Deák, Adam Gali, B. Aradi, Nguyen Tien Son, Erik Janzén, Wolfgang J. Choyke

817