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Materials Science Forum Vols. 338-342

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342

ToC:

Table of Contents

Paper Title Page

Hall Mobility of the Electron Inversion Layer in 6H-SiC MOSFETs
Authors: N.S. Saks, S.S. Mani, Anant K. Agarwal, V.S. Hegde
737
Application and Improvement of the Spreading Resistance Method for p-Type 6H-SiC
Authors: T. Gebel, D. Panknin, R. Riehn, S. Parascandola, Wolfgang Skorupa
741
Theoretical Study of Carrier Freeze-Out Effects on Admittance Spectroscopy and Frequency-Dependent C-V Measurements in SiC
Authors: A.V. Los, Michael S. Mazzola, Stephen E. Saddow
745
On the Existence of Deep Levels of the Acceptors Ga and In and of the Potential Double Acceptors Zn and Cd in SiC
Authors: N. Achtziger, Joachim Grillenberger, M. Uhrmacher, W. Witthuhn
749
Correlation between DLTS and Photoluminescence in He-implanted 6H-SiC
Authors: Thomas Frank, Gerhard Pensl, Song Bai, Robert P. Devaty, Wolfgang J. Choyke
753
Observation of Deep Levels in SiC by Optical-Isothermal Capacitance Transient Spectroscopy
Authors: Setsuko Kobayashi, Seiji Imai, Yasuaki Hayami, Mitsuhiro Kushibe, Takashi Shinohe, Hideyo Okushi
757
Improved Measurements of High-Field Drift Velocity in Silicon Carbide
Authors: I.A. Khan, James A. Cooper
761
A Full Band Monte Carlo Study of High Field Carrier Transport in 4H-SiC
Authors: H.-E. Nilsson, E. Bellotti, K.F. Brennan, M. Hjelm
765
Electron Saturated Vertical Velocities in Silicon Carbide Polytypes
Authors: Vladimir Ilich Sankin, Alla A. Lepneva
769
High Temperature Effects on the Terahertz Mobility of Hot Electrons in 3C-SiC and 6H-SiC
Authors: E.W.S. Caetano, E.F. Bezerra, V. Lemos, V.N. Freire, E.F. da Silva Jr., J.A.P. da Costa
773

Showing 181 to 190 of 403 Paper Titles

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