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HomeMaterials Science ForumMaterials Science Forum Vols. 338-342

Materials Science Forum Vols. 338-342

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342

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Table of Contents

Paper Title Page

Characterization of Silicon Carbide using Raman Spectroscopy

Authors: J.C. Burton, F.H. Long, Yuri I. Khlebnikov, I.I. Khlebnikov, Mathew Parker, Tangali S. Sudarshan

615

Photoluminescence Study of CVD Layers Highly Doped with Nitrogen

Authors: Urban Forsberg, Anne Henry, Margareta K. Linnarsson, Erik Janzén

619

Low Temperature Photoluminescence of ¹³C Enriched SiC-Crystals Grown by the Modified Lely Method

Authors: Horst Sadowski, Christian Peppermüller, Norbert Schulze, Michael Laube, Gerhard Pensl, Reinhard Helbig

623

Sub-μm Scale Photoluminescence Image of SiC and GaN at a Low Temperature

Authors: Masahiro Yoshimoto, Motoki Goto, Junji Saraie, Tsunenobu Kimoto, Hiroyuki Matsunami

627

Vanadium-related Center in 4H Silicon Carbide

Authors: Björn Magnusson, Matthias Wagner, Nguyen Tien Son, Erik Janzén

631

Spectroscopic Investigation of Vanadium Acceptor Level in 4H and 6H-SiC

Authors: V. Lauer, G. Brémond, A. Souifi, Gérard Guillot, K. Chourou, Roland Madar, B. Clerjaud

635

Photoluminescence and DLTS Measurements of 15MeV Erbium Implanted 6H and 4H SiC

Authors: Y. Shishkin, Wolfgang J. Choyke, Robert P. Devaty, N. Achtziger, Th. Opfermann, W. Witthuhn

639

Electronic States of Vacancies in 3C- and 4H-SiC

Authors: A. Zywietz, J. Furthmüller, Friedhelm Bechstedt

643

Pseudo-Donors in SiC

Authors: T. Egilsson, Ivan G. Ivanov, Anne Henry, Erik Janzén

647

Metastability of a Hydrogen-related Defect in 6H-SiC

Authors: Anne Henry, T. Egilsson, Ivan G. Ivanov, Erik Janzén

651