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HomeMaterials Science ForumMaterials Science Forum Vols. 338-342

Materials Science Forum Vols. 338-342

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342

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Table of Contents

Paper Title Page

Investigation of Low Angle Grain Boundaries in Modified-Lely SiC Crystals by High Resolution X-ray Diffractometry

Authors: Masakazu Katsuno, Noboru Ohtani, Takashi Aigo, Hirokatsu Yashiro, M. Kanaya

493

Structural, Electrical and Optical Properties of Bulk 4H and 6H p-Type SiC

Authors: Evgenia V. Kalinina, A.S. Zubrilov, N.I. Kuznetsov, Irina P. Nikitina, Alla S. Tregubova, M.P. Shcheglov, V.Ya. Bratus

497

High Order X-ray Diffraction and Internal Atomic Layer Roughness of Epitaxial and Bulk SiC Materials

Authors: G. Xu, Zhe Chuan Feng

501

4H-SiC CVD Epitaxial Layers with Improved Structural Quality Grown on SiC Wafers with Reduced Micropipe Density

Authors: Evgenia V. Kalinina, A.S. Zubrilov, V. Solov'ev, N.I. Kuznetsov, Anders Hallén, Andrey O. Konstantinov, S. Karlsson, S.V. Rendakova, Vladimir Dmitriev

505

Structural and Optical Studies of Low-Doped n-6H SiC Layers Grown by Vacuum Sublimation

Authors: N.S. Savkina, Alexander A. Lebedev, Alla S. Tregubova, M.P. Scheglov

509

Stacking Fault Energy of 6H-SiC and 4H-SiC Single Crystals

Authors: Moon Hi Hong, A.V. Samant, P. Pirouz

513

Deformation Tests on 4H-SiC Single Crystals between 900°C and 1360°C and the Microstructure of the Deformed Samples

Authors: Jean Luc Demenet, Moon Hi Hong, P. Pirouz

517

Void Shapes in the Si (111) Substrate at the Heteroepitaxial Thin Film / Si Interface

Authors: J. Jinschek, Ute Kaiser, W. Richter

521

Defect Characterization in 3C-SiC Films Grown on Thin and Thick Silicon Top Layers of SIMOX

Authors: Moon Hi Hong, Juyong Chung, F. Namavar, P. Pirouz

525

Structural Characteristics of 3C-SiC Films Epitaxially Grown on the Si/Si₃N₄/SiO₂ System

Authors: S. Zappe, H. Möller, G. Krötz, M. Eickhoff, Wolfgang Skorupa, E. Obermeier, J. Stoemenos

529