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HomeMaterials Science ForumMaterials Science Forum Vols. 338-342

Materials Science Forum Vols. 338-342

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342

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Table of Contents

Paper Title Page

Thermal Annealing Effect on TiN/Ti Layers on 4H-SiC: Metal-Semiconductor Interface Characterization

Authors: D. Defives, O. Durand, F. Wyczisk, J. Olivier, Olivier Noblanc, Christian Brylinski

411

A Surface/Interfacial Structural Model of Pd Ultra-thin Film on SiC at Elevated Temperatures

Authors: Wei Jie Lu, D.T. Shi, T.R. Crenshaw, A. Burger, W.E. Collins

415

Study of a Clean Surface of α - SiC and its Metallization Process by Cu, Au and Ni using STM and Electron/Photon Spectroscopies

Authors: Motohiro Iwami, Masaaki Hirai, Masahiko Kusaka, I. Mihara, T. Saito, Masaharu Yamaguchi, T. Morii, Masanori Watanabe

419

Monolayer Growth Modes of Re and Nb on the Polar Faces of 4H-SiC

Authors: K.W. Bryant, M.J. Bozack

423

Group-ΙΙΙ Adsorption and Bond Stacking on SiC(111) Surfaces

Authors: Ulrike Grossner, J. Furthmüller, Friedhelm Bechstedt

427

Characterization of SiC using Synchrotron White Beam X-ray Topography

Authors: Michael Dudley, X. Huang

431

Growth of Low Micropipe Density SiC Wafers

Authors: Adrian R. Powell, Shao Ping Wang, George R. Brandes

437

Investigation of the Origin of Micropipe Defect

Authors: Atsuto Okamoto, Naohiro Sugiyama, Toshihiko Tani, Nobuo Kamiya

441

Analysis on the Formation and Elimination of Filamentary and Planar Voids in Silicon Carbide Bulk Crystals

Authors: Dieter Hofmann, Matthias Bickermann, Wolfgang Hartung, Albrecht Winnacker

445

Origin of the Internal Stress Around the Micropipe of 6H-SiC Single Crystal

Authors: Tomohisa Kato, Hitoshi Ohsato, Takashi Okuda

449