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Materials Science Forum
Vols. 338-342
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Materials Science Forum Vols. 338-342

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342

ToC:

Table of Contents

Paper Title Page

Plasma Enhanced Chemical Vapor Deposition and Characterization of Hydrogenated Amorphous SiC Films on Si
Authors: Yi Hua Wang, Jian Yi Lin, Zhe Chuan Feng, Soo Jin Chua, Cheng Hon Huan Alfred
325
Thin Films of α-Si1-xCx:H Deposited by PECVD: The r.f. Power and H2 Dilution Role
Authors: R.J. Prado, M.C.A. Fantini, M.H. Tabacniks, I. Pereyra, A.M. Flank
329
Surface Composition of 4H-SiC as a Function of Temperature
Authors: K.W. Bryant, M.J. Bozack
335
Stacking Rearrangement on SiC Surfaces: A Possible Seed for Polytype Heterostructure Growth
Authors: Ulrich Starke, J. Bernhardt, J. Schardt, A. Seubert, K. Heinz
341
Atomic Structure of 6H-SiC(000-1)-(2x2)c
Authors: J. Bernhardt, A. Seubert, M. Nerding, Ulrich Starke, A. Heinz
345
Ab Initio Calculation on Clean and Oxygen Covered 6H-SiC(0001) Surfaces: (√ 3x√ 3)R30° Reconstruction
Authors: Wenchang Lu, Peter Krüger, Johannes Pollmann
349
Photo-Emission Electron Microscopy (PEEM) of Cleaned and Etched 6H-SiC(0001)
Authors: J.D. Hartman, K. Naniwae, C. Petrich, V. Ramachandran, R.M. Feenstra, Robert J. Nemanich, Robert F. Davis
353
High Resolution Electron Energy Loss Spectroscopy of √ 3x√ 3 6H-SiC(0001)
Authors: Kunimasa Takahashi, Masao Uchida, Makoto Kitabatake
357
In-Situ RHEED Analysis During α-SiC Homoepitaxy on (0001)Si- and (000-1)C-Faces by Gas Source Molecular Beam Epitaxy
Authors: Tomoaki Hatayama, Takashi Fuyuki, Shun-ichi Nakamura, K. Kurobe, Tsunenobu Kimoto, Hiroyuki Matsunami
361
(10-10)– and (11-20)–Surfaces in 2H–, 4H– and 6H–SiC
Authors: E. Rauls, Z. Hajnal, Peter Deák, Thomas Frauenheim
365

Showing 81 to 90 of 403 Paper Titles

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