Materials Science Forum Vols. 338-342

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342

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Paper Title Page

Lateral Epitaxial Overgrowth and Pendeo Epitaxy of 3C-SiC on Si Substrates

Authors: Stephen E. Saddow, G.E. Carter, Bruce Geil, T.S. Zheleva, Galyna Melnychuck, M.E. Okhuysen, Michael S. Mazzola, R.D. Vispute, Michael A. Derenge, Matthew H. Ervin, Kenneth A. Jones

245

Selective Epitaxial Growth of Silicon Carbide on Patterned Silicon Substrates Using Hexachlorodisilane and Propane

Authors: Chacko Jacob, Moon Hi Hong, Juyong Chung, P. Pirouz, Shigehiro Nishino

249

The APD Annihilation Mechanism of 3C-SiC Hetero-Epilayer on Si(001) Substrate

Authors: Yuuki Ishida, Tetsuo Takahashi, Hajime Okumura, Toshihiro Sekigawa, Sadafumi Yoshida

253

Improvement of 3C-SiC Surface Morphology on Si(100) by Adding HCl using Atmospheric CVD

Authors: Yi Chen, Yasuichi Masuda, Chacko Jacob, T. Shirafuji, Shigehiro Nishino

257

Carbonization on (100) Silicon for Heteroepitaxial Growth of 3C-SiC

Authors: Hideki Shimizu, Takaomi Ohba

261

Growth of 3C-SiC/Si Multilayer Heterostructures by Supersonic Free Jets

Authors: Yoshifumi Ikoma, Takeshi Endo, T. Tada, Fumio Watanabe, Teruaki Motooka

265

Formation of High Quality SiC on Si(100) at 900°C using Monomethylsilane Gas-Source MBE

Authors: Hideki Nakazawa, M. Suemitsu, S. Asami

269

Growth and Characterization of N-Doped SiC Films from Trimethylsilane

Authors: Jin Ming Chen, A.J. Steckl, Mark J. Loboda

273

The Effect of Ge on the Structure & Morphology of SiC Films Grown on (111) Si Substrates

Authors: W.L. Sarney, L. Salamanca-Riba, P. Zhou, Crawford Taylor, Michael G. Spencer, R.D. Vispute, Kenneth A. Jones

277

In Situ Monitoring of the Effect of Ge on the SiC Growth on (111)Si Surfaces

Authors: T. Wöhner, Thomas Stauden, J.A. Schaefer, Joerg Pezoldt

281