Materials Science Forum Vols. 338-342

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https://doi.org/10.4028/www.scientific.net/MSF.338-342

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Paper Title Page

High Growth Rate Epitaxy of Thick 4H-SiC Layers

Authors: Mikael Syväjärvi, Rositza Yakimova, Henrik Jacobsson, Margareta K. Linnarsson, Anne Henry, Erik Janzén

165

Competitive Growth between Deposition and Etching in 4H-SiC CVD Epitaxy Using Quasi-Hot Wall Reactor

Authors: Mitsuhiro Kushibe, Yuuki Ishida, Hajime Okumura, Tetsuo Takahashi, Koh Masahara, Takaya Ohno, Takahito Suzuki, Tomoyuki Tanaka, Sadafumi Yoshida, Kazuo Arai

169

Multi-Wafer VPE Growth and Characterization of SiC Epitaxial Layers

Authors: H.D. Nordby, Jr., Michael J. O'Loughlin, Mike F. MacMillan, Albert A. Burk, James D. Oliver

173

Homoepitaxy of Silicon Carbide Using the Single Precursor 1,3-Disilabutane

Authors: Sung Yong Lee, Kyung Won Lee, Yunsoo Kim

177

Supersonic Seeded Beam Assisted Growth of Epitaxial Silicon Carbide

Authors: K.D. Jamison, M.L. Kempel, Richard L. Woodin, J.D. Shovlin, D. Beck, Q. Li, M.E. Kordesch

181

4H-SiC Substrate Orientation Effects on Hydrogen Etching and Epitaxial Growth

Authors: B.E. Landini, George R. Brandes

185

4H-SiC (11-20) Epitaxial Growth

Authors: Tsunenobu Kimoto, Toshihiro Yamamoto, Zhi Yong Chen, Hiroshi Yano, Hiroyuki Matsunami

189

Homoepitaxial Growth of 6H SiC on Single Crystalline Spheres

Authors: Kai Christiansen, S. Christiansen, Horst P. Strunk, Reinhard Helbig

193

Morphological Stability of 6H-SiC Epitaxial Layer on Hemispherical Substrates Prepared by Chemical Vapor Deposition

Authors: Shigehiro Nishino, Y. Nishio, Yasuichi Masuda, Yi Chen, Chacko Jacob

197

Growth of SiC on 6H-SiC {01-14} Substrates by Gas Source Molecular Beam Epitaxy

Authors: Shun-ichi Nakamura, Tomoaki Hatayama, Tsunenobu Kimoto, Takashi Fuyuki, Hiroyuki Matsunami

201