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Materials Science Forum Vols. 338-342

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342

ToC:

Table of Contents

Paper Title Page

Growth of 3C SiC Single Crystals from Convection Dominated Melts
Authors: Jürgen Wollweber, V. Chévrier, D. Siche, Th. Duffar
119
An Overview of SiC Growth
Authors: Hiroyuki Matsunami
125
Fast SiC Epitaxial Growth in a Chimney CVD Reactor and HTCVD Crystal Growth Developments
Authors: Alexsandre Ellison, Jie Zhang, W. Magnusson, Anne Henry, Qamar-ul Wahab, Peder Bergman, Carl G. Hemmingsson, Nguyen Tien Son, Erik Janzén
131
Morphology Control for Growth of Thick Epitaxial 4H SiC Layers
Authors: Jie Zhang, Alexsandre Ellison, Erik Janzén
137
Vertical Hot-Wall Type CVD for SiC Growth
Authors: Kunimasa Takahashi, Masao Uchida, Makoto Kitabatake, Takeshi Uenoyama
141
LPCVD Growth and Structural Properties of 4H-SiC Epitaxial Layers
Authors: Hidekazu Tsuchida, Isaho Kamata, Tamotsu Jikimoto, Kunikaza Izumi
145
3-D Computational Modeling of SiC Epitaxial Growth in a Hot Wall Reactor
Authors: Wei Ji, Peter M. Lofgren, Christer Hallin, Chun-Yuan Gu
149
3-D Thermal and Flow Modeling of Hot Wall Epitaxial Chemical Vapor Deposition Reactors, Heated by Induction
Authors: Peter M. Lofgren, Christer Hallin, Chun-Yuan Gu, Wei Ji
153
The Development of Resistive Heating for the High Temperature Growth of α-SiC using a Vertical CVD Reactor
Authors: Ebenezer Eshun, Crawford Taylor, N.Fama Diagne, Michael G. Spencer, Ian T. Ferguson, Alex Gurary, Rick Stall
157
Initial Results on Thick 4H-SiC Epitaxial Layers Grown Using Vapor Phase Epitaxy
Authors: L.B. Rowland, Greg Dunne, Jaime A. Freitas
161

Showing 31 to 40 of 403 Paper Titles

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