Materials Science Forum Vols. 338-342

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https://doi.org/10.4028/www.scientific.net/MSF.338-342

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Paper Title Page

Structural Investigations of the Nucleation and Growth of SiC during Rapid Thermal Conversion of (111)Si

Authors: Volker Cimalla, W. Attenberger, J.K.N. Lindner, B. Stritzker, Joerg Pezoldt

285

The Influence of Foreign Atoms on the early Stages of SiC Growth on (111)Si

Authors: Joerg Pezoldt, György Vida, M. Rouhani Laridjani, M. Averous, T. Wöhner, J.A. Schaefer, Thomas Stauden, Gernot Ecke, R. Pieterwas, Lothar Spieß

289

Studies of the Initial Stages of Silicon Carbide Growth using Molecular Hydrocarbon and Methyl Radical Gas Species

Authors: J.S. Gold, J.S. Lannon, Jr., V.L. Tolani, K.S. Ziemer, C.D. Stinespring

293

Carbonization of SIMOX Substrates for Fabrication of Single-crystal SiC-on-insulator

Authors: Shinsuke Harada, M. Arita, Yoshifumi Ikoma, Teruaki Motooka

297

SOL Thinning Effects on 3C-SiC on SOI*

Authors: N. Planes, H. Möller, Jean Camassel, Y. Stoimenos, L. Falkovski, M. Eickhoff, G. Krötz

301

Low Temperature Growth of 3C-SiC on Silicon for Advanced Substrate Development

Authors: M.E. Okhuysen, Michael S. Mazzola, Y.-H. Lo

305

Epitaxial Growth of β-SiC on Ion-Beam Synthesized β-SiC: Structural Characterization

Authors: A. Romano-Rodríguez, A. Pérez-Rodríguez, C. Serre, J.R. Morante, Jaume Esteve, M.C. Acero, Reinhard Kögler, Wolfgang Skorupa, Mikael Östling, Nils Nordell, S. Karlsson, J. Van Landuyt

309

Growth of Single Crystalline 3C-SiC and AIN on Si using Porous Si as a Compliant Seed Crystal

Authors: D. Purser, M. Jenkins, D. Lieu, F. Vaccaro, A. Faik, M.A. Hasan, H.J. Leamy, C. Carlin, Mauro R. Sardela, Qing Xiang Zhao, Magnus Willander, M. Karlsteen

313

The Growth and Characterization of 3C-SiC/SiNx/Si Structure

Authors: Kwang Chul Kim, Chan Il Park, Kee Suk Nahm, Eun Kyung Suh

317

The Diffusion Coefficient of Silicon in Thin SiC Layers as a Criterion for the Quality of the Grown Layers

Authors: Volker Cimalla, T. Wöhner, Joerg Pezoldt

321