Materials Science Forum Vols. 338-342

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342

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Paper Title Page

Characterization of Implantation Layer in (1-100) Oriented 4H- and 6H- SiC

Authors: Masataka Satoh, Y. Nakaike, K. Uchimura, K. Kuriyama

905

Electrical and Structural Properties of Al and B Implanted 4H-SiC

Authors: Yasunori Tanaka, Naoto Kobayashi, Hajime Okumura, Ryoichi Suzuki, Toshiyuki Ohdaira, Mitsuru Hasegawa, M. Ogura, Sadafumi Yoshida, Hisao Tanoue

909

Secondary Defect Distribution in High Energy Ion Implanted 4H-SiC

Authors: Takaya Ohno, Naoto Kobayashi

913

Coimplantation Effects of (C and Si)/Ga in 6H-SiC

Authors: Yasunori Tanaka, Naoto Kobayashi, Mitsuru Hasegawa, M. Ogura, Yuuki Ishida, Sadafumi Yoshida, Hajime Okumura, Hisao Tanoue

917

Improved Annealing Process for 6H-SiC p⁺-n Junction Creation by Al Implantation

Authors: Mihai Lazar, Laurent Ottaviani, Marie Laure Locatelli, Dominique Planson, B. Canut, Jean-Pierre Chante

921

Characteristics of n-p Junction Diodes made by Double-Implantations into SiC

Authors: Jesse B. Tucker, E.M. Handy, Mulpuri V. Rao, O.W. Holland, Kenneth A. Jones, N. Papanicolaou

925

Reactivation of Hydrogen-Passivated Aluminum Acceptors in p-type SiC

Authors: C. Hülsen, N. Achtziger, U. Reislöhner, W. Witthuhn

929

Formation of Passivated Layers in P-Type SiC by Low Energy Ion Implantation of Hydrogen

Authors: N. Achtziger, C. Hülsen, Martin S. Janson, Margareta K. Linnarsson, Bengt Gunnar Svensson, W. Witthuhn

933

Metal-contact Enhanced Incorporation of Deuterium in 4H- and 6H-SiC

Authors: Margareta K. Linnarsson, Anita Lloyd Spetz, Martin S. Janson, Lars-G. Ekedahl, S. Karlsson, Adolf Schöner, Ingemar Lundström, Bengt Gunnar Svensson

937

Transient-Enhanced Diffusion of Boron in SiC

Authors: Michael Laube, Gerhard Pensl

941