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HomeMaterials Science ForumMaterials Science Forum Vols. 338-342

Materials Science Forum Vols. 338-342

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342

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Table of Contents

Paper Title Page

Ohmic Contact Formation on n-Type 6H-SiC using NiSi₂

Authors: Tomonori Nakamura, Hisanori Shimada, Masataka Satoh

985

Lowering the Annealing Temperature of Ni/SiC for Ohmic Contacts under N₂ Gas, and Application to a UV Sensor

Authors: Tadao Toda, Yasuhiro Ueda, Minoru Sawada

989

Adhesion and Microstructure of Ni Contacts to 3C-SiC

Authors: Soo Chang Kang, Moo Whan Shin

993

Low Resistance Ohmic Contacts to n-SiC Using Niobium

Authors: T.N. Oder, John R. Williams, K.W. Bryant, M.J. Bozack, John Crofton

997

A Comparison of Single- and Multi-Layer Ohmic Contacts Based on Tantalum Carbide on n-Type and Osmium on p-Type Silicon Carbide at Elevated Temperatures

Authors: T. Jang, G. Rutsch, B. Odekirk, L.M. Porter

1001

Improved Ohmic Contacts to 6H-SiC by Pulsed Laser Processing

Authors: Koichi Nakashima, Osamu Eryu, S. Ukai, K. Yoshida, Masanori Watanabe

1005

Al/Si Ohmic Contacts to p-Type 4H-SiC for Power Devices

Authors: Liliana Kassamakova, Roumen Kakanakov, Ivan Kassamakov, Nils Nordell, Susan Savage, Erik B. Svedberg, Lynnette D. Madsen

1009

Searching for Device Processing Compatible Ohmic Contacts to Implanted p-Type 4H-SiC

Authors: Yan Bin Luo, Feng Yan, Kiyoshi Tone, Jian Hui Zhao, John Crofton

1013

Structural and Morphological Characterization of Al/Ti-Based Ohmic Contacts on p-Type 4H-SiC Annealed Under Various Conditions

Authors: Konstantin Vassilevski, Konstantinos Zekentes, George Konstantinidis, N. Papanicolaou, Irina P. Nikitina, A.I. Babanin

1017

Thermal Stability in Vacuum and in Air of Al/Ni/W Based Ohmic Contacts to p-Type SiC

Authors: Sam Liu, Gregory Potts, James D. Scofield

1021