Authors: Koh Masahara, Yuuki Ishida, Hajime Okumura, Tetsuo Takahashi, Mitsuhiro Kushibe, Takaya Ohno, Takahito Suzuki, Tomoyuki Tanaka, Sadafumi Yoshida, Kazuo Arai

1037

SiC In-Situ Pre-Growth Etching: A Thermodynamic Study

Authors: E. Neyret, Lea Di Cioccio, Elisabeth Blanquet, C. Raffy, C. Pudda, Thierry Billon, Jean Camassel

1041

The Effect of In Situ Surface Treatment on the Growth of 3C-SiC Thin Films on 6H-SiC Substrate - An X-ray Triple Crystal Diffractometry and Synchrotron X-ray Topography Study

Authors: J. Chaudhuri, J.T. George, J.H. Edgar, Zhi Yong Xie, Z. Rek

1045

Dry Etching and Metallization Schemes in a GaN/SiC Heterojunction Device Process

Authors: Erik Danielsson, Carl Mikael Zetterling, Mikael Östling, Sang Kwon Lee, Kevin J. Linthicum, D.B. Thomson, O.H. Nam, Robert F. Davis

1049

Demonstration of Deep (80μm) RIE Etching of SiC for MEMS and MMIC Applications

Authors: David C. Sheridan, Jeff B. Casady, C.E. Ellis, R.R. Siergiej, J.D. Cressler, R.M. Strong, W.M. Urban, W.F. Valek, C.F. Seiler, H. Buhay

1053

Reactive Ion Etching in CF₄ / O₂ Gas Mixtures for Fabricating SiC Devices

Authors: Masayuki Imaizumi, Yoichiro Tarui, Hiroshi Sugimoto, J. Tanimura, Tetsuya Takami, Tatsuo Ozeki

1057

Electrochemical C-V Profiling of P-type 6H-SiC

Authors: M. Kayambaki, Konstantinos Zekentes

1061