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Vols. 338-342

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HomeMaterials Science ForumMaterials Science Forum Vols. 338-342

Materials Science Forum Vols. 338-342

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342

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Table of Contents

Paper Title Page

Bulk Micromachining of Polycrystalline SiC Using Si Molds Fabricated by Deep Reactive Ion Etching

Authors: N. Rajan, Christian A. Zorman, Mehran Mehregany

1145

Preliminary Investigation of SiC on Silicon for Biomedical Applications

Authors: G.E. Carter, Jeff B. Casady, J. Bonds, M.E. Okhuysen, James D. Scofield, Stephen E. Saddow

1149

SiC and GaN High-Voltage Power Switching Devices

Authors: T. Paul Chow

1155

Electrical Impact of SiC Structural Crystal Defects on High Electric Field Devices

Authors: Philip G. Neudeck

1161

Performance and Reliability Issues of SiC-Schottky Diodes

Authors: Roland Rupp, Michael Treu, Anton Mauder, Erich Griebl, Wolfgang Werner, Wolfgang Bartsch, Dietrich Stephani

1167

Designing, Physical Simulation and Fabrication of High-Voltage (3.85 kV) 4H-SiC Schottky Rectifiers Processed on Hot-Wall and Chimney CVD Films

Authors: Qamar-ul Wahab, Alexsandre Ellison, Jie Zhang, Urban Forsberg, E. Duranova, Anne Henry, Lynnette D. Madsen, Erik Janzén

1171

Influence of Epitaxial Growth and Substrate Induced Defects on the Breakdown of High-voltage 4H-SiC Schottky Diodes

Authors: Qamar-ul Wahab, Alexsandre Ellison, Christer Hallin, Anne Henry, J. Di Persio, R. Martinez, Erik Janzén

1175

A 2.8kV, Forward Drop JBS Diode with Low Leakage

Authors: Fanny Dahlquist, J.O. Svedberg, Carl Mikael Zetterling, Mikael Östling, Bo Breitholtz, H. Lendenmann

1179

3.6 kV 4H-SiC JBS Diodes with Low RonS

Authors: Yoshitaka Sugawara, Katsunori Asano, Ryuichi Saito

1183

Fabrication and Testing of 1,000V-60A 4H-SiC MPS Diodes in an Inductive Half-Bridge Circuit

Authors: Kiyoshi Tone, Jian Hui Zhao, M. Weiner, M. Pan

1187